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| HL6545MG Visible High Power Laser Diode for Recordable-DVD Description The HL6545MG is a 0.65 m band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as H/H type Recordable-DVD, and various other types of optical equipment. ODE-208-038D (Z) Rev.4 Sept. 04, 2006 Features * Operating temperature: 75C Max (300 mW(pulse), pw = 30 ns, duty = 35 %) * Visible light output : p = 660 nm Typ * Low operating current : Iop(1) = 175 mA Typ (Po = 120 mW) Iop(2) = 350 mA Typ (Po = 300 mW(pulse), pw = 30 ns, duty = 35 %) Package Type * HL6545MG: MG Internal Circuit 1 3 LD 2 Absolute Maximum Ratings (TC = 25C) Item Symbol Optical output power PO Pulse optical output power PO(pulse) LD reverse voltage VR(LD) CW Operating temperature Topr(CW) Pulse Operating temperature Topr(pulse) Storage temperature Tstg Note: Pulse condition : Pulse width = 30 ns , duty = 35 % Ratings 130 300 * 2 -10 to +75 -10 to +75 -40 to +85 Unit mW mW V C C C Optical and Electrical Characteristics (TC = 25C) Item Threshold current Operating current(1) Operating current(2) Operating voltage Lasing wavelength Beam divergence parallel to the junction(1) Beam divergence perpendicular to the junction Beam divergence parallel to the junction(2) Astigmatism Symbol Ith IOP(1) IOP(2) VOP p //(1) //(2) AS Min -- -- -- -- 652 7.5 15 7.5 -- Typ 60 175 350 2.5 660 10.0 17 -- 1 Max 75 210 -- 3.0 664 12.0 19 -- -- Unit mA mA mA V nm deg. deg. deg. m Test Conditions -- PO = 120 mW PO = 300 mW(pulse) pw = 30 ns, duty = 35 % PO = 120 mW PO = 120 mW PO = 120 mW PO = 120 mW PO = 5 mW PO = 5 mW, NA = 0.55 Rev.4 Sept. 04, 2006 page 1 of 4 HL6545MG Typical Characteristic Curves Optical Output Power vs. Forward Current 120 TC = 25C TC = 0C 80 TC = 75C 40 Pulse Optical Output Power vs. Forward Current Optical output power, PO(Pulse) (mW) 300 TC = 25C Optical output power, PO (mW) 200 TC = 0C TC = 75C 100 pw = 30ns duty = 35% 0 0 100 200 300 400 500 0 0 50 100 150 200 250 300 Forward current, IF (mA) Forward current, IF (mA) Threshold Current vs. Case Temperature 100 Slope Efficiency vs. Case Temperature 1.2 Slope efficiency, S (mW/mA) 10 20 30 40 50 60 70 80 Threshold current, Ith (mA) 1.0 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 60 70 80 50 10 0 Case temperature, TC (C) Case temperature, TC (C) Wavelength vs. Case Temperature 680 Far Feild Pattern 1.0 PO = 120mW TC = 25C 0.8 Lasing Wavelength, p (nm) PO = 120mW 675 670 665 660 655 650 645 640 0 20 40 60 80 100 Relative intensity Perpendicular 0.6 0.4 0.2 0 -40 -30 -20 -10 0 Parallel 10 20 30 40 Case temperature, TC (C) Angle, ( ) Rev.4 Sept. 04, 2006 page 2 of 4 HL6545MG Package Dimensions As of July, 2002 Unit: mm 0.4 +0.1 -0 5.6 +0 -0.025 1.0 0.1 (0.4) 1.6 0.2 2.3 0.2 0.25 Glass 4.1 0.3 3.55 0.1 1.2 0.1 6.5 1.0 3 - 0.45 0.1 1 2 3 1 2 3 2.0 0.2 OPJ Code JEDEC JEITA Mass (reference value) 1.27 (90) Emitting Point LD/MG -- -- 0.3 g Rev.4 Sept. 04, 2006 page 3 of 4 HL6545MG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Device Business Unit Opnext Japan, Inc. Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ (c)2007 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 2.0 Rev.4 Sept. 04, 2006 page 4 of 4 |
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